SI1489EDH features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? typical esd performance 2000 v in hbm ? built in esd protection with zener diode ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices - cellular phone/smart phone - dsc - portable game console - mp3 - gps - tablet pc product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 8 0.048 at v gs = - 4.5 v - 2.0 e 10.5 nc 0.059 at v gs = - 2.5 v - 2.0 e 0.073 at v gs = - 1.8 v - 2.0 e 0.097 at v gs = - 1.5 v - 1.5 0.190 at v gs = - 1.2 v - 0.5 markin g code bs xx lot tracea b ility and date code part # code yy orderin g information: si14 8 9edh-t1-ge3 (lead (p b )-free and halogen-free) sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top v ie w d d g d d s p-channel mosfet s d r g notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 125 c/w. e. package limited. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d - 2.0 a, e a t c = 70 c - 2.0 e t a = 25 c - 2.0 b, c, e t a = 70 c - 2.0 b, c, e pulsed drain current (t = 300 s) i dm - 8 continuous source-drain diode current t c = 25 c i s - 2.0 a, e t a = 25 c - 1.3 b, c maximum power dissipation t c = 25 c p d 2.8 w t c = 70 c 1.8 t a = 25 c 1.56 b, c t a = 70 c 1 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 60 80 c/w maximum junction-to-foot (drain) steady state r thjf 34 45 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 8 v v ds temperature coefficient v ds /t j i d = - 250 a - 2 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.35 - 0.7 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 5 a zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 8 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.0 a 0.040 0.048 v gs = - 2.5 v, i d = - 1.0 a 0.048 0.059 v gs = - 1.8 v, i d = - 1.0 a 0.060 0.073 v gs = - 1.5 v, i d = - 0.5 a 0.070 0.097 v gs = - 1.2 v, i d = - 0.5 a 0.110 0.190 forward transconductance a g fs v ds = - 4 v, i d = - 3.0 a 12 s dynamic b gate-source charge q g v ds = - 4 v, v gs = - 4.5 v, i d = - 7.4 a 10.5 16 nc q gs 1.5 gate-drain charge q gd 3.3 gate resistance r g f = 1 mhz 80 400 800 tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 0.7 i d ? - 6 a, v gen = - 4.5 v, r g = 1 90 180 ns rise time t r 170 340 turn-off delay time t d(off) 690 1380 fall time t f 630 1260 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 2.0 a pulse diode forward current i sm - 8 body diode voltage v sd i s = - 2 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 12 25 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 18 SI1489EDH product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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